SVF2N60RM datasheet, mosfet equivalent, Silan Microelectronics

Features and benefits

 2A,600V,RDS(on)(typ)=3.7@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability 2 11 3 3 1.Gate 2. Drain 3. Source TO-252-2L 1 23 TO-251J-.

Description

SVF2N60RD/M/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary FCellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimiz.

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