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SVD3410M - 100V N-CHANNEL MOSFET

Download the SVD3410M datasheet PDF. This datasheet also covers the SVD3410D variant, as both devices belong to the same 100v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology.

Features

  • 17A,100V,RDS(on)(typ. )=68m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVD3410D-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD3410M
Manufacturer Silan Microelectronics
File Size 500.86 KB
Description 100V N-CHANNEL MOSFET
Datasheet download datasheet SVD3410M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVD3410D/M/T_Datasheet 17A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. It is widely used in vehicle voltage regulator etc. FEATURES  17A,100V,RDS(on)(typ.)=68m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
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