SVD3410M Datasheet | Silan Microelectronics

DESCRIPTION SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. It is widely used in vehicle voltage regulator etc. FEATURES - 17A,100V,RDS(on)(typ.)=68m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVD3410D SVD3410DTR SVD3410M SVD3410T Package TO-252-2L TO-252-2L TO-251D-3L TO-220-3L Marking SVD3410D SVD3410D SVD3410M SVD3410T Material Halogen free Halogen free Halogen free Pb free Packing Tube Tape & Reel Tube Tube ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Drain Current TC=25°C TC=100°C Drain Current Pulsed Power Dissipation(TC=25C) -Derate above 25C Single Pulsed Avalanche Energy(Note 1) Operation Junction Temperature Range Storage Temperature Range Symbol VDS VGS EAS TJ Tstg Rating SVD3410D/M SVD3410T ±16...