SVD3410M Datasheet | Silan Microelectronics

SVD3410D/M/T_Datasheet 17A, 100V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD3410D/M/T is an N-channel enhancement mode high voltage MOS field effect transistor which is produced using Silan new structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. It is widely used in vehicle voltage regulator etc. Features - 17A,100V,RDS(on)(typ.)=68m@VGS=10V - Low gate charge - Low Crss - Fast switching - Improved dv/dt capability ORDERING INFORMATION Part No. SVD3410D SVD3410DTR SVD3410M...