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SVD2N65F, SVD2N65M Datasheet - Silan Microelectronics

SVD2N65F 650V N-CHANNEL MOSFET

SVD2N65M/F/T/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM 2 structure VDMOS technology. The improved 1 3 TO-251-3L planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-stat.

SVD2N65F Features

* TO-220-3L TO-220F-3L ∗ ∗ ∗ ∗ ∗ 2A, 650V,RDS(on)(typ.)=4.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD2N65M SVD2N65F SVD2N65T SVD2N65D SVD2N65DTR Package TO-251-3L TO-220F-3L TO-220-3L TO-252-2L TO-252-2L Marking SVD2

SVD2N65M-SilanMicroelectronics.pdf

This datasheet PDF includes multiple part numbers: SVD2N65F, SVD2N65M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD2N65F, SVD2N65M

Manufacturer:

Silan Microelectronics

File Size:

624.27 KB

Description:

650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD2N65F, SVD2N65M.
Please refer to the document for exact specifications by model.

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SVD2N65F SVD2N65M 650V N-CHANNEL MOSFET Silan Microelectronics

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