* High breakdown voltage margin
* Very low leakage current
* High output power: 20W
* High secondary breakdown tolerance and reliability NOMENCLATURE Nam.

SJT4793NF is NPN silicon transistor fabricated with Silan planar transistor technology, The advanced technology of multilayer epitaxy, ultra-low density of crystal defects, polyimide passivation, and thin chip of less than 200 microns makes low ther.

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