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SVD4N65F, SVD4N65T Datasheet - Silan

SVD4N65F (SVD4N65T / SVD4N65F) 650V N-CHANNEL MOSFET

SVD4N65T/F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure DMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide su.

SVD4N65F Features

* ∗ 4A,650V,RDS(on) typ =2.3Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability ORDERING SPECIFICATIONS Part No. SVD4N65T SVD4N65F Package TO-220-3L TO-220F-3L Marking SVD4N65T SVD4N65F Shipping 50Unit/Tube 50Unit/Tube ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwis

SVD4N65T_Silan.pdf

This datasheet PDF includes multiple part numbers: SVD4N65F, SVD4N65T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

SVD4N65F, SVD4N65T

Manufacturer:

Silan

File Size:

446.14 KB

Description:

(svd4n65t / svd4n65f) 650v n-channel mosfet.

Note:

This datasheet PDF includes multiple part numbers: SVD4N65F, SVD4N65T.
Please refer to the document for exact specifications by model.

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TAGS

SVD4N65F SVD4N65T SVD4N65T SVD4N65F 650V N-CHANNEL MOSFET Silan

SVD4N65F Distributor