SPB80N03 Datasheet | Siemens Semiconductor Group

SPP80N03 SIPMOS® Power Transistor Features - N channel - Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 80 Enhancement mode RDS(on) 0.006 Ω - Avalanche rated - dv/dt rated - 175°C operating temperature Type SPP80N03 SPB80N03 Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4734-A2 Tube P-TO263-3-2 Q67040-S4734-A3 Tabe and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 80 80 320 700 30 6 kV/µs mJ Unit A TC = 25 °C, 1) TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID...