SFH486 Datasheet - Siemens Semiconductor Group

SFH486 GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA .

GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 Anode 1.8 1.2 29.5 27.5 5.7 5.1 Chip position 0.6 0.4 Approx. weight 0.5 g GEX06626 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlässigkeit q Gute spektrale Anpassung an Si-Fotoempfänger Anwendungen q IR-Fernsteueru.

SFH486 Features

* q Fabricated in a liquid phase epitaxy process q High reliability q Spectral match with silicon photodetectors Applications q IR remote control of hi-fi and TV-sets, video Rundfunkgeräten, Videorecordern, Lichtdimmern q Gerätefernsteuerungen für Gleich- und Wechsellichtbetrieb Typ Type SFH 486 Bes

SFH486_SiemensSemiconductorGroup.pdf

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Datasheet Details

Part number:

SFH486

Manufacturer:

Siemens Semiconductor Group

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38.51 KB

Description:

Gaaias-ir-lumineszenzdiode 880 nm gaaias infrared emitter 880 nm.

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SFH486 SFH486 GaAIAs-IR-Lumineszenzdiode 880 GaAIAs Infrared Emitter 880 Siemens Semiconductor Group

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