SFH486 - GaAIAs Infrared Emitter

Datasheet Summary

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA

Features

q Fabricated in a liquid phase epitaxy process q High reliability q Spectral match with silicon photodetectors.

Siemens Semiconductor Group

📥 Download Datasheet

Datasheet Details

Part number	SFH486
Manufacturer	Siemens Semiconductor Group
File Size	38.51 KB
Description	GaAIAs Infrared Emitter
Datasheet	SFH486 Datasheet
Additional preview pages of the SFH486 datasheet.

📁 Similar Datasheet

SFH483 - GaAlAs Infrared Emitter (OSRAM)
SFH483E7800 - GaAlAs Infrared Emitter (OSRAM)
SFH485 - GaAIAs Infrared Emitters (Siemens)
SFH485 - GaAlAs Infrared Emitters (OSRAM)
SFH4851 - Infrared Emitter (OSRAM)
SFH4855 - Infrared Emitter (OSRAM)
SFH400 - GaAs Infrared Emitter (OSRAM)
SFH401 - GaAs Infrared Emitter (Siemens)
SFH401 - GaAs Infrared Emitter (OSRAM)
SFH4030B - Infrared Emitter (OSRAM)

Other Datasheets by Siemens Semiconductor Group

SFH4860 - GaAlAs Light Emitting Diode
SFH480 - GaAlAs Infrared Emitters
SFH481 - GaAlAs Infrared Emitters
SFH482 - GaAlAs Infrared Emitters
SFH483 - GaAlAs Infrared Emitter
SFH484 - GaAIAs Infrared Emitters
SFH485P - GaAIAs Infrared Emitter
SFH487 - GaAIAs Infrared Emitter

Full PDF Text Transcription

Click to expand full text

GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 Anode 1.8 1.2 29.5 27.5 5.7 5.1 Chip position 0.6 0.4 Approx. weight 0.5 g GEX06626 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Published: May 20, 2005 |