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SFH486 Datasheet GaAIAs Infrared Emitter

Manufacturer: Siemens Semiconductor Group (now Infineon)

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General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaβstrom Forward current Stoβstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Irel Spectral bandwidth at 50 % of Irel IF = 100 mA Abstrahlwinkel Half angle Aktive Chipfläche Active chip area Abmessungen der aktive Chipfläche Dimension of the active chip area Abstand Chipoberfläche bis Linsenscheitel Distance chip front to lens top Symbol Symbol λpeak Wert Value 880 Einheit Unit nm Symbol Symbol Wert Value – 55 ...

+ 100 100 5 100 2.5 200 375 Einheit Unit °C °C V mA A mW K/W Top;

Tstg Tj VR IF IFSM Ptot RthJA ∆λ 80 nm ϕ ± 11 0.16 0.4 × 0.4 Grad deg.

Overview

GaAIAs-IR-Lumineszenzdiode (880 nm) GaAIAs Infrared Emitter (880 nm) SFH 486 Area not flat 0.6 0.4 2.54 mm spacing 0.8 0.4 9.0 8.2 7.8 7.5 ø5.1 ø4.8 5.9 5.5 Anode 1.8 1.2 29.5 27.5 5.7 5.1 Chip position 0.6 0.4 Approx.

weight 0.5 g GEX06626 Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Key Features

  • q Fabricated in a liquid phase epitaxy process q High reliability q Spectral match with silicon photodetectors.

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