SFH481 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

Product Overview

Siemens Semiconductor Group

Datasheet Details

Part number	SFH481
Manufacturer	Siemens Semiconductor Group
File Size	66.58 KB
Description	GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
Datasheet	SFH481 Datasheet
Additional preview pages of the SFH481 datasheet.

Product details

Description

SFH 481: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 480, SFH 482: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Kennwerte (TA = 25 °C) Characteristics Bezeichnung Description Wellenlänge der Strahlung Wavelength at peak emission

Features

q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481: Same package as BPX 43, BPY 63 q SFH 482: Same package as BPX 38, BPX 65.

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Other Datasheets by Siemens Semiconductor Group

SFH480 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
SFH482 - GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm
SFH484 - GaAIAs Infrared Emitters
SFH485P - GaAIAs Infrared Emitter (880 nm)
SFH486 - GaAIAs-IR-Lumineszenzdiode 880 nm GaAIAs Infrared Emitter 880 nm
SFH4860 - GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm

Published: May 20, 2005 |