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SFH481 - GaAlAs Infrared Emitters

General Description

SFH 481: Betriebs- und Lagertemperatur Operating and storage temperature range SFH 480, SFH 482: Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0

Key Features

  • q GaAIAs infrared emitting diode, fabricated in a liquid phase epitaxy process q Anode is electrically connected to the case q High reliability q Matches all Si-Photodetectors q Hermetically sealed package q SFH 480: Same package as SFH 216 q SFH 481: Same package as BPX 43, BPY 63 q SFH 482: Same package as BPX 38, BPX 65.

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📁 Similar Datasheet

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
SFH480 GaAlAs Infrared Emitters
SFH482 GaAlAs Infrared Emitters
SFH483 GaAlAs Infrared Emitter
SFH484 GaAIAs Infrared Emitters
SFH485P GaAIAs Infrared Emitter

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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GaAlAs-IR-Lumineszenzdioden (880 nm) GaAlAs Infrared Emitters (880 nm) SFH 480 SFH 481 SFH 482 2.54mm spacing ø0.45 ø4.8 ø4.6 1 0.9 .1 Chip position (2.7) Cathode (SFH 480) Anode (SFH 216, SFH 231, SFH 400) Radiant Sensitive area ø5.6 ø5.3 5.3 14.5 5.0 12.5 7.4 6.6 Approx. weight 0.5 g GEO06314 ø0.45 (2.7) Chip position Anode = SFH 481 Cathode = SFH 401 (package) 1.1 .9 0 2.54 mm spacing welded 14.5 12.5 Approx. weight 0.35 g Chip position (2.7) ø0.45 5.5 5.0 14.5 12.5 5.3 5.0 ø5.6 ø5.3 GET06013 Approx. weight 0.5 g Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Semiconductor Group 1 1998-04-16 fet06092 Cathode (SFH 402, BPX 65) Anode (SFH 482) 2.54 spacing ø4.8 ø4.6 Radiant sensitive area 1.1 .9 0 1.1 0.9 fet06091 5.