Q62702-C623
Q62702-C623 is NPN Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) manufactured by Siemens Semiconductor Group.
NPN Silicon AF Transistors
BCX 58 BCX 59
High current gain q Low collector-emitter saturation voltage q plementary types: BCX 78, BCX 79 (PNP) q 2 3 1
Type BCX 58 VIII BCX 58 IX BCX 58 X BCX 59 VIII BCX 59 IX BCX 59 X
Marking
- Ordering Code Q62702-C619 Q62702-C620 Q62702-C621 Q62702-C623 Q62702-C624 Q62702-C625
Pin Configuration 1 2 3 C B E
Package1) TO-92
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Peak base current Junction temperature Storage temperature range Thermal Resistance Junction
- ambient Junction
- case2)
1) 2)
Symbol BCX 58 VCE0 VCB0 VEB0 IC ICM IBM Tj Tstg 32 32
Values BCX 59 45 45 7 100 200 200 500 150
- 65 … + 150
Unit V m A
Total power dissipation, TC = 70 ˚C Ptot m W ˚C
Rth JA Rth JC
≤ ≤
250 160
K/W
For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm.
Semiconductor Group
BCX 58 BCX 59
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 2 m A BCX 58 BCX 59 Collector-base breakdown voltage IC = 10 µA BCX 58 BCX 59 Emitter-base breakdown voltage IE = 1 µA Collector cutoff current VCB = 32 V VCB = 45 V VCB = 32 V, TA = 150 ˚C VCB = 45 V, TA = 150 ˚C BCX 58 BCX 59 BCX 58 BCX 59 ICEX
- - IEB0 h FE BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X BCX 59 VII BCX 59 VIII BCX 59 IX BCX 59 X 20 20 40 100 120 180 250 380 40 45 60 60 78 145 220 300 170 250 350 500
- -
- -
- -
- - 220 310 460...
