Q62702-C2606
Q62702-C2606 is NPN Silicon AF Transistors (For AF driver and output stages High collector current) manufactured by Siemens Semiconductor Group.
BCP 54M ... BCP 56M
NPN Silicon AF Transistors
- For AF driver and output stages
- High collector current
- Low collector-emitter saturation voltage
- plementary types: BCP 51M...BCP 53M(PNP)
4 5 3 2 1
VPW05980
Type BCP 54M BCP 55M BCP 56M
Marking Ordering Code Pin Configuration BAs BEs BHs Q62702-C2595 1 = B Q62702-C2606 Q62702-C2607 2=C 3=E 4 n.c. 5=C
Package SCT-595
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Symbol BCP 54M BCP 55M BCP 56M Unit 45 45 5 60 60 5 80 100 5 V
VCEO VCBO VEBO
DC collector current Peak collector current Base current Peak base current Total power dissipation, T S ≤ 77 °C Junction temperature Storage temperature
IC I CM IB I BM Ptot Tj T stg
1 1.5 100 200 1.7 150 -65...+150 m A A m A W °C
Thermal Resistance Junction ambient 1) Junction
- soldering point
Rth JA Rth JS
≤98 ≤43
K/W
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Semiconductor Group 11
Au 1998-11-01 -11-1998
BCP 54M ... BCP 56M
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage typ. max.
Unit
V(BR)CEO
BCP 54M BCP 55M BCP 56M 45 60 80 100 20 250 0.5 1
I C = 10 m A, I B = 0
Collector-base breakdown voltage
V(BR)CBO
BCP 54M BCP 55M BCP 56M 45 60 100
I C = 100 µA, IB = 0
Emitter-base breakdown voltage
V(BR)EBO I CBO I CBO h FE h FE h FE VCEsat VBE(ON)
5 25 40 25
- I E = 10 µA, I C = 0
Collector cutoff current n A µA V
VCB = 30 V, I E =...
