Q62702-C2376
BCR 133S
NPN Silicon Digital Transistor Array
- Switching circuit, inverter, interface circuit, driver circuit
- Two (galvanic) internal isolated Transistors in one package
- Built in bias resistors (R1=10kΩ, R2=10kΩ)
Type BCR 133S
Marking Ordering Code Pin Configuration WCs
Package
Q62702-C2376 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 115°C Junction temperature Storage temperature Symbol Values 50 50 10 20 100 250 150
- 65 ... + 150 m A m W °C Unit V
VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg
Thermal Resistance Junction ambient
1)
Rth JA Rth JS
≤ 275 ≤ 140
K/W
Junction
- soldering point
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu
Semiconductor Group
Nov-26-1996
BCR 133S
Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown...
