Q62702-C2307 Description
Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Unit hFE DC current gain IC = 10 µA, VCE = 5 V BC 846 AW ...
| Part number | Q62702-C2307 |
|---|---|
| Download | Q62702-C2307 Datasheet (PDF) |
| File Size | 272.32 KB |
| Manufacturer | Siemens Semiconductor Group |
| Description | NPN Silicon AF Transistor (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
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| Part Number | Description |
|---|---|
| Q62702-C230 | PNP SILICON TRANSISTORS |
| Q62702-C230-P | PNP SILICON TRANSISTORS |
| Q62702-C230-S2 | PNP SILICON TRANSISTORS |
| Q62702-C2300 | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
| Q62702-C2301 | PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) |
Semiconductor Group 2 BC 846W ... BC 850W Characteristic at TA = 25 ˚C, unless otherwise specified. Unit hFE DC current gain IC = 10 µA, VCE = 5 V BC 846 AW ...