Q62702-C2257 Datasheet | Siemens Semiconductor Group

BCR 135 NPN Silicon Digital Transistor - Switching circuit, inverter, interface circuit, driver circuit - Built in bias resistor ( R1 =10kΩ , R2=47kΩ ) Type BCR 135 Marking WJs Ordering Code Q62702-C2257 Pin Configuration 1=B 2=E 3=C Package SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Input on Voltage DC collector current Total power dissipation, TS = 102 °C Junction temperature Storage temperature Symbol Value 50 50 6 20 100 200 150 65...+150 m A m W °C Unit V VCEO VCBO VEBO Vi(on) IC Ptot Tj Tstg Thermal Resistance Junction ambient 1) Rth JA Rth JS ≤ 350 ≤ 240 K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm 2 Cu Semiconductor Group Jun-18-1997 BCR 135 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter DC Characteristics Collector-emitter breakdown voltage Symbol min. Values typ. 10 0.21 max. 100 167 0.3 1 1.4 13 0.24 kΩ n A µA V V Unit V(BR)CEO V(BR)CBO ICBO IEBO h FE VCEsat Vi(off) Vi(on) R1 R1/R2 50 50 70 0.5 0.5 7 0.19 IC = 100 µA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 m A, VCE = 5 V Collector-emitter saturation voltage1) IC = 10 m A, IB = 0.5 m A Input off voltage IC = 100 µA, VCE = 5 V Input on Voltage IC = 2 m A, VCE = 0.3 V Input resistor Resistor ratio AC Characteristics Transition frequency f T Ccb - 150...