Q62702-C2129
Q62702-C2129 is NPN Silicon AF Transistor (For general AF application High collector current High current gain) manufactured by Siemens Semiconductor Group.
NPN Silicon AF Transistor q q q q q
BCP 68
For general AF application High collector current High current gain Low collector-emitter saturation voltage plementary type: BCP 69 (PNP)
Type BCP 68 BCP 68-10 BCP 68-16 BCP 68-25
Marking BCP 68 BCP 68-10 BCP 68-16 BCP 68-25
Ordering Code (tape and reel) Q62702-C2126 Q62702-C2127 Q62702-C2128 Q62702-C2129
Pin Configuration 1 2 3 4 B C E C
Package1) SOT-223
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point
1) 2)
Symbol VCE0 VCES VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values 20 25 25 5 1 2 100 200 1.5 150
- 65 … + 150
Unit V
A m A W ˚C
Rth JA Rth JS
≤ ≤
72 17
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
BCP 68
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 30 m A, IB = 0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IB = 0 Collector-base cutoff current VCB = 25 V VCB = 25 V, TA = 150 ˚C Emitter-base cutoff current VEB = 5 V, IC = 0 DC current gain1) IC = 5 m A, VCE = 10 V IC = 500 m A, VCE = 1 V V(BR)CE0 V(BR)CES V(BR)CB0 V(BR)EB0 ICB0
- - IEB0 h FE BCP 68 BCP 68-10 BCP 68-16 BCP 68-25 VCEsat VBE
- - 0.6
- - 1 50 85 85 100 160 60
- -
- 100 160...
