Q62702-C1832 Datasheet | Siemens Semiconductor Group

NPN Silicon Darlington Transistors BCV 29 BCV 49 For general AF applications q High collector current q High current gain q plementary types: BCV 28, BCV 48 (PNP) q Type BCV 29 BCV 49 Marking EF EG Ordering Code (tape and reel) Q62702-C1853 Q62702-C1832 Pin Configuration 1 2 3 4 B C E C Package1) SOT-89 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCV 29 VCE0 VCB0 VEB0 IC ICM IB IBM P1tot Tj Tstg 30 40 10 Values BCV 49 60 80 10 500 800 100 200 1 150 - 65 … + 150 Unit V m A W ˚C 75 20 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BCV 29 BCV 49 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 m A BCV 29 BCV 49 Collector-base breakdown voltage IC = 100 µA BCV 29 BCV 49 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 m A, VCE = 5 V IC = 100 m A, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 29 BCV 49 BCV 29 BCV 49 BCV 29 BCV 49 BCV 29 BCV 49 VCEsat VBEsat BCV 29 BCV 49 BCV 29 BCV 49 IEB0 h FE 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - -...