Q62702-C1474 Datasheet | Siemens Semiconductor Group

NPN Silicon Darlington Transistors BCV 27 BCV47 For general AF applications q High collector current q High current gain q plementary types: BCV 26, BCV 46 (PNP) q Type BCV 27 BCV 47 Marking FFs FGs Ordering Code (tape and reel) Q62702-C1474 Q62702-C1501 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 74 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol BCV 27 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 30 40 10 Values BCV 47 60 80 10 500 800 100 200 360 150 - 65 … + 150 Unit V m A m W ˚C 280 210 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group BCV 27 BCV 47 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 m A BCV 27 BCV 47 Collector-base breakdown voltage IC = 100 µA BCV 27 BCV 47 Emitter-base breakdown voltage, IE = 10 µA Collector cutoff current VCB = 30 V VCB = 60 V VCB = 30 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current, VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 10 m A, VCE = 5 V IC = 100 m A, VCE = 5 V IC = 0.5 A, VCE = 5 V BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 BCV 27 BCV 47 VCEsat VBEsat BCV 27 BCV 47 BCV 27 BCV 47 IEB0 h FE 4000 2000 10000 4000 20000 10000 4000 2000 - - - - - - - - - - - - - - - - - - - - 1 1.5 V V(BR)CE0 30 60 V(BR)CB0 40 80 V(BR)EB0 ICB0 - - - - - - - - - - 100 100 10 10 100 n A n A µA µA n...