Q62702-C1138 Datasheet | Siemens Semiconductor Group

BC 617 BC 618 NPN Silicon Darlington Transistors BC 617 BC 618 High current gain q High collector current q 2 1 3 Type BC 617 BC 618 Marking - Ordering Code Q62702-C1137 Q62702-C1138 Pin Configuration 1 2 3 C B E Package1) TO-92 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TC = 66 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient Junction - case2) Rth JA Rth JC ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg Values BC 617 40 50 BC 618 55 80 12 500 800 100 200 625 150 Unit V m A m W ˚C - 65 … + 150 200 135 K/W 1) 2) For detailed information see chapter Package Outlines. Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group BC 617 BC 618 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 m A BC 617 BC 618 Collector-base breakdown voltage IC = 100 µA BC 617 BC 618 Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 40 V VCB = 60 V VCB = 40 V, TA = 150 ˚C VCB = 60 V, TA = 150 ˚C Emitter cutoff current VEB = 4 V DC current gain IC = 100 µA; VCE = 5 V IC = 10 m A; VCE = 5 V1) IC = 200 m A; VCE = 5 V1) IC = 1000 m A; VCE = 5 V1) BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 BC 617 BC 618 VCEsat VBEsat BC 617 BC 618 BC 617 BC 618 IEB0 h FE 4000 2000 10000 4000 20000 10000 10000 4000 - - - - - - - - - - - - - - - - 70000 50000 - - 1.1 1.6 V V(BR)EB0 ICB0 - - - - - -...