Q62702-B664 Datasheet | Siemens Semiconductor Group

BBY 52-03W Silicon Tuning Diode - High Q hyperabrupt dual tuning diode - Designed for low tuning voltage operation - For VCO's in mobile munications equipment Type BBY 52-03W Marking Ordering Code I (white) Q62702-B664 Q62702- Pin Configuration 1=C 2=A - Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 7 20 - 55 ... + 150 - 55 ... + 150 Unit V m A °C VR IF Top Tstg Semiconductor Group Feb-04-1997 BBY 52-03W Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit 10 200 n A VR = 6 V, TA = 25 °C VR = 6 V, TA = 65 °C AC characteristics Diode capacitance 1.4 0.85 1.85 1.5 1.35 1.15 1.6 0.9 0.12 1.8 2.2 1.45 p F VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio CT1/CT4 1.1 2.1 Ω 1.8 p F n H - VR = 1 V, VR = 4 V, f = 1 MHz Series resistance rs CC Ls VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Series inductance chip to ground Semiconductor Group Feb-04-1997 BBY 52-03W Diode capacitance CT = f (VR) f = 1MHz 2.4 p...