Q62702-A919
Q62702-A919 is Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) manufactured by Siemens Semiconductor Group.
Silicon Low Leakage Diode
Low-leakage applications q Medium speed switching times q Single diode q
BAS 116
Type BAS 116
Marking JVs
Ordering Code (tape and reel) Q62702-A919
Pin Configuration
Package1) SOT-23
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 75 85 250 4.5 370 150
- 65 … + 150
Unit V m A A m W ˚C
330 260
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
BAS 116
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A Reverse current VR = 75 V VR = 75 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0 V, f = 1 MHz Reverse recovery time IF = 10 m A, IR = 10 m A, RL = 100 Ω measured at IR = 1 m A Test circuit for reverse recovery time CD trr
- - 2 0.5
- 3 p F
µs
Values typ. max.
Unit
V(BR) VF
- -
V m V
- -
- - IR
- -
- -
- -
- -...
