Q62702-A66
Q62702-A66 is Silicon Dual Schottky Diode (DBS mixer application to 12 GHz Low noise figure Low barrier type) manufactured by Siemens Semiconductor Group.
Features
DBS mixer application to 12 GHz q Low noise figure q Low barrier type q
ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-099 Marking S5 Ordering Code (tape and reel) Q62702-A66 Pin Configuration Package1) P-SOT-143-4-6
Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS ≤ 55 ˚C Storage temperature range Operating temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point
1) 2)
Symbol VR IF Ptot Tstg Top
Values 4 110 100
- 55 … + 150
Unit V m A m W
- 55 … + 150 ˚C
Rth JA Rth JS
≤ ≤
1090 930
K/W
For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
Semiconductor Group
BAT 15-099
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified. Parameter Breakdown voltage IR = 5 µA Forward voltage IF = 1 m A IF = 10 m A Forward voltage matching IF = 10 m A Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 m A/50 m A Symbol min. V(BR) VF
- - ∆VF CT RF
- -
- 0.23 0.32
- - 5.5
- - 20 0.35
- m V p F Ω 4 Values typ.
- max.
- V Unit
Semiconductor Group
BAT 15-099
Forward current IF = f (VF)
Forward current IF = f (TS; TA- )
- Package mounted on alumina If
Reverse current IR = f (VR)
Diode capacitance CT = f (VR) f = 1 MHz
Semiconductor...
