• Part: Q62702-A1239
  • Description: Silicon Switching Diode Preliminary data (For high-speed switching applications)
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 21.40 KB
Download Q62702-A1239 Datasheet PDF
Siemens Semiconductor Group
Q62702-A1239
Q62702-A1239 is Silicon Switching Diode Preliminary data (For high-speed switching applications) manufactured by Siemens Semiconductor Group.
BAS 16-02W Silicon Switching Diode Preliminary data - For high-speed switching applications VES05991 Type BAS 16-02W Marking 3 Ordering Code Q62702-A1239 Pin Configuration 1=A 2=C Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, T S = 119 °C Junction temperature Storage temperature Symbol Value 75 85 250 2.5 100 150 - 65 ...+150 m A A m W °C Unit V VR VRM IF I FS Ptot Tj T stg Semiconductor Group Semiconductor Group Jul-24-1998 1998-11-01 BAS 16-02W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF V m V I (BR) = 100 µA Forward voltage I F = 1 m A I F = 10 m A I F = 50 m A I F = 150 m A Reverse current - - 715 855 1000 1250 1 µA n A IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 °C VR = 75 V, TA = 150 °C Forward recovery voltage - - 30 50 1.75 V Vfr I F = 10 m A, t p = 20 ns AC characteristics Diode capacitance CD t...