| Part number | Q62702-A1231 |
|---|---|
| Datasheet | Q62702-A1231_SiemensSemiconductorGroup.pdf |
| File Size | 29.60 KB |
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| Description | Silicon Switching Diode Preliminary data (For high-speed switching applications) |
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Symbol Values Parameter min. DC characteristics Breakdown voltage typ. ΙF Oscillograph EHN00017 Pulse generator:.
See all Siemens Semiconductor Group (now Infineon) datasheets
| Part Number | Description |
|---|---|
| Q62702-A1234 | Silicon Schottky Diode (Rectifier Schottky diode for modem applications High reverse voltage For power supply) |
| Q62702-A1239 | Silicon Switching Diode Preliminary data (For high-speed switching applications) |
| Q62702-A120 | Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz) |
| Q62702-A1200 | Silicon Schottky Diodes (For mixer applications in the VHF / UHF range For high-speed switching applications) |
| Q62702-A1201 | NPN Silicon Switching Transistor Array |
| Q62702-A1202 | PNP Silicon Switching Transistor Array |
| Q62702-A121 | SILICON PIN DIODES |
| Q62702-A121 | Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz) |
| Q62702-A1211 | Silicon PIN Diode (PIN diode for high speed switching of RF signals/ Low forward resistance/ small capacitance small inductance) |
| Q62702-A1214 | Silicon Rf Switching Diode Preliminary data |
