Q62702-A1041 Datasheet | Siemens Semiconductor Group

BAR 64... Silicon PIN Diode l High voltage current controlled l RF resistor for RF attenuator and swirches l Freqency range above 1 MHz l Low resistance and short carrier lifetime l For frequencies up to 3 GHz Type BAR 64 BAR 64-04 BAR 64-05 BAR 64-06 Marking POs PPs PRs PSs Ordering code (tape and reel) Q62702-A1041 Q62702-A1010 Q62702-A1042 Q62702-A1043 Pin configuration Package 1 2 3 A C SOT-23 A C C/A A A C/C C C A/A 1) Maximum ratings per diode Parameter Reverse voltage Forward current Total Power dissipation TS ≤ 90°C BAR64-04,-05,-06 TS ≤ 65°C Junction temperature Operating temperature range Storage temperature range Thermal resistance Junction-ambient BAR64 BAR64-04,-05,-06 1) Symbol BAR 64 200 100 250 250 150 -55 +150°C -55...+150°C Unit V m A m W °C °C °C VR IF Ptot Tj Top Tstg Rth JA ≤ 320 ≤ 500 K/W Junction-soldering point BAR64 BAR64-04,-05,-06 Rth JS ≤ 240 ≤ 340 1)Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Edition A01, 23.02.95 BAR 64... Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC characteristics per diode Breakdown voltage IR = 5 µA Forward voltage IF = 50 m A Diode capacitance VR = 20 V, f = 1 MHz Forward resistance IF = 1 m A, f = 100 MHz IF = 10 m A, f = 100 MHz IF = 100 m A, f = 100 MHz Charge carrier lifetime IF = 10 m A, IR = 6 m A, IR = 3 m A Series inductance V(BR) 200 0.23 12.5 2.1 0.85 1.55 1.4 - V V 1.1 p F 0.35 Ω -20 3.8 1.35 µs n H VF CT...