IL222AT Datasheet | Siemens Semiconductor Group

FEATURES N EW - High Current Transfer Ratio, IF=1 m A, IL221AT, 100% Minimum IL222AT, 200% Minimum IL223AT, 500% Minimum Withstand Test Voltage, 2500 VACRMS Electrical Specifications Similar to Standard 6 Pin Coupler Industry Standard SOIC-8 Surface Mountable Package Standard Lead Spacing, .05" Available in Tape and Reel (suffix T) (Conforms to EIA Standard RS481A) patible with Dual Wave, Vapor Phase and IR Reflow Soldering Underwriters Lab File #E52744 (Code Letter P) PHOTODARLINGTON SMALL OUTLINE SURFACE MOUNT OPTOCOUPLER Package Dimensions in Inches (mm) - - - - - - - .120 ±.005 (3.05 ±.13) .240 (6.10) Pin One ID .192 ±.005 (4.88 ±.13) .004 (.10) .008 (.20) Anode 1 .154 ±.005 C L (3.91 ±.13) .016 (.41) .015 ±.002 (.38 ±.05) .008 (.20) .050 (1.27) typ. .040 (1.02) 40° Cathode 2 NC 3 NC 4 8 NC 7 Base 6 Collector 5 Emitter 7° .058 ±.005 (1.49 ±.13) .125 ±.005 (3.18 ±.13) 5° max. .020 ±.004 (.15 ±.10) 2 plcs. R.010 Lead (.25) max. Coplanarity ±.0015 (.04) max. TOLERANCE: ± .005 (unless otherwise noted) DESCRIPTION The IL221AT/IL222AT/IL223AT is a high current transfer ratio (CTR) optocoupler with a Gallium Arsenide infrared LED emitter and a silicon NPN photodarlington transistor detector. This device has a CTR tested at an 1 m A LED current. This low drive current permits easy interfacing from CMOS to LSTTL or TTL. This optocoupler is constructed in a standard SOIC8 foot print which makes it ideally suited for high density applications. In addition to eliminating through-holes requirements, this package conforms to standards for surface mounted devices. Maximum Ratings Emitter Peak Reverse Voltage 6.0 V Continuous Forward Current 60 m A Power Dissipation at 25°C 90 m W Derate Linearly from 25°C 1.2 m W/°C Detector Collector-Emitter Breakdown Voltage 30 V Emitter-Collector Breakdown Voltage...