IL201 Datasheet | Siemens Semiconductor Group

FEATURES - High Current Transfer Ratio, 75% to 450% - Minimum Current Transfer Ratio, 10% - Guaranteed at IF=1m A - High Collector-Emitter Voltage, BVCEO=70V - Long Term Stability - Industry Standard DIP Package - Underwriters Lab File #E52744 - VDE 0884 Available with Option 1 DESCRIPTION The IL201/202/203 are optically coupled pairs employing a Gallium Arsenide infrared LED and a Silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the device while maintaining a high degree of electrical isolation between input and output. The IL201/202/ 203 can be used to replace relays and transformers in many digital interface applications, as well as analog applications such as CRT modulation. Maximum Ratings Emitter Peak Reverse Voltage 6 V Continuous Forward Current 60 m A Power Dissipation at 25°C 100 m W Derate Linearly from 25°C 1.33 m W/°C Detector Collector-Emitter Breakdown Voltage, BVCEO 70 V Emitter-Collector Breakdown Voltage, BVECO 7 V Collector-Base Breakdown Voltage, BVCBO 70 V Power Dissipation 200 m W Derate Linearly from 25°C 2.6 m W/°C Package Isolation Test Voltage (t=1 sec.) 5300 VACRMS Total Package Dissipation at 25°C A (LED + Detector) 250 m W Derate Linearly from 25°C 3.3 m W/°C Creepage 7 min mm Clearance 7 min mm Storage Temperature - 55°C to +150°C Operating Temperature - 55°C to +100°C Lead Soldering Time at 260°C 10 sec. Characteristics (0°C to 70°C unless...