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HYB3165165T-60 - 4M x 16-Bit Dynamic RAM

General Description

EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) EDO-DRAM (access time 50 ns) EDO-DRAM (access time 60 ns) Pin Names A0-A12 A0-A11 RAS OE I/O1-I/O16 UCAS, LCAS WRITE Vcc Vss

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3165165T-50 4M x 16-Bit Dynamic RAM
HYB3165165TL-50 4M x 16-Bit Dynamic RAM
HYB3165165TL-60 4M x 16-Bit Dynamic RAM
HYB3165165AT-40 4M x 16-Bit Dynamic RAM
HYB3165165AT-50 4M x 16-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4M x 16-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164165T(L) -50/-60 HYB 3165165T(L) -50/-60 Preliminary Information • • • • • • • • • • • • 4 194 304 words by 16-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 84 ns (-50 version) 104 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Hyper page mode (EDO) cycle time 20 ns (-50 version) 25 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164165T(L)-50) max. 360 active mW ( HYB 3164165T(L)-60) max. 504 active mW ( HYB 3165165T(L)-50) max. 432 active mW ( HYB 3165165T(L)-60) 7.2 mW standby (TTL) 720 W standby (MOS) 14.