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HYB3165165BTL-60 - 4M x 16-Bit Dynamic RAM

General Description

O VCC I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 N.C.

VCC WE RAS N.C.

N.C.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3165165BTL-50 4M x 16-Bit Dynamic RAM
HYB3165165BT-40 4M x 16-Bit Dynamic RAM
HYB3165165BT-50 4M x 16-Bit Dynamic RAM
HYB3165165BT-60 4M x 16-Bit Dynamic RAM
HYB3165165AT-40 4M x 16-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4M x 16-Bit Dynamic RAM (8k, 4k & 2k Refresh, EDO-version) Preliminary Information • • • • HYB 3164165BT(L) -40/-50/-60 HYB 3165165BT(L) -40/-50/-60 HYB 3166165BT(L) -40/-50/-60 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns • • Single + 3.3 V ( ± 0.3V) power supply Low power dissipation: -40 HYB3166165BT(L) HYB3165165BT(L) HYB3164165BT(L) 864 486 306 -50 702 396 252 -60 558 324 216 mW mW mW • • • • • 7.2 mW standby (TTL) 3.