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HYB3164805BTL-60 - 8M x 8-Bit Dynamic RAM

General Description

VCC I/O1 I/O2 I/O3 I/O4 N.C.

VCC WE RAS .

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3164805BTL-50 8M x 8-Bit Dynamic RAM
HYB3164805BT-40 8M x 8-Bit Dynamic RAM
HYB3164805BT-50 8M x 8-Bit Dynamic RAM
HYB3164805BT-60 8M x 8-Bit Dynamic RAM
HYB3164805BJ-40 8M x 8-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh, EDO-version) HYB 3164805BJ/BT(L) -40/-50/-60 HYB 3165805BJ/BT(L) -40/-50/-60 Premininary Information • • • • 8 388 608 words by 4-bit organization 0 to 70 °C operating temperature Hyper Page Mode - EDO - operation Performance: -40 tRAC tCAC tAA tRC tHPC RAS access time CAS access time Access time from address Read/write cycle time Hyper page mode (EDO) cycle time 40 10 20 69 16 -50 50 13 25 84 20 -60 60 15 30 104 25 ns ns ns ns ns • • Single + 3.3 V ( ± 0.3V) power supply Low power dissipation: max. 306 active mW ( HYB 3164805BJ/BT(L)-40) max. 252 active mW ( HYB 3164805BJ/BT(L)-50) max. 216 active mW ( HYB 3164805BJ/BT(L)-60) max. 486 active mW ( HYB 3165805BJ/BT(L)-40) max. 396 active mW ( HYB 3165805BJ/BT(L)-50) max.