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HYB3164800J-50 - 8M x 8-Bit Dynamic RAM

General Description

500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) 500 mil DRAM (access time 50 ns) 500 mil DRAM (access time 60 ns) Semiconductor Group 122 HYB 3164

Key Features

  • A tRAS 35 10.
  • 50.
  • 30.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3164800J-60 8M x 8-Bit Dynamic RAM
HYB3164800AJ-40 8M x 8-Bit Dynamic RAM
HYB3164800AJ-50 8M x 8-Bit Dynamic RAM
HYB3164800AJ-60 8M x 8-Bit Dynamic RAM
HYB3164800AT-40 8M x 8-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8M x 8-Bit Dynamic RAM (4k & 8k Refresh) HYB 3164800J/T -50/-60 HYB 3165800J/T -50/-60 Preliminary Information • • • • • • • • • • • 8 388 608 words by 8-bit organization 0 to 70 ˚C operating temperature Fast access and cycle time RAS access time: 50 ns (-50 version) 60 ns (-60 version) Cycle time: 90 ns (-50 version) 110 ns (-60 version) CAS access time: 13 ns ( -50 version) 15 ns ( -60 version) Fast page mode cycle time 35 ns (-50 version) 40 ns (-60 version) Single + 3.3 V (± 0.3V) power supply Low power dissipation max. 396 active mW ( HYB 3164800J/T-50) max. 360 active mW ( HYB 3164800J/T-60) max. 504 active mW ( HYB 3165800J/T-50) max. 432 active mW ( HYB 3165800J/T-60) 7.