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HYB3164160ATL-60 - 4M x 16-Bit Dynamic RAM

General Description

P-TSOPII-50 (400 mil) O VCC I/O1 I/O2 I/O3 I/O4 VCC I/O5 I/O6 I/O7 I/O8 N.C.

VCC WE RAS N.C.

N.C.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3164160ATL-50 4M x 16-Bit Dynamic RAM
HYB3164160AT-40 4M x 16-Bit Dynamic RAM
HYB3164160AT-50 4M x 16-Bit Dynamic RAM
HYB3164160AT-60 4M x 16-Bit Dynamic RAM
HYB3164160T-50 4M x 16-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4M x 16-Bit Dynamic RAM ( 8k, 4k & 2k Refresh) HYB 3164160AT(L) -40/-50/-60 HYB 3165160AT(L) -40/-50/-60 HYB 3166160AT(L) -40/-50/-60 Advanced Information • • • • 4 194 304 words by 16-bit organization 0 to 70 °C operating temperature Fast Page Mode operation Performance: -40 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/write cycle time Fast page mode cycle time 40 10 20 75 30 -50 50 13 25 90 35 -60 60 15 30 110 40 ns ns ns ns ns • • Single + 3.3 V (± 0.3V) power supply Low power dissipation: -40 HYB3166160AT(L) HYB3165160AT(L) HYB3164160AT(L) 900 756 612 -50 558 468 378 -60 396 324 270 mW mW mW • • • • • 7.2 mW standby (TTL) 3.