Description
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) Pin Names A0 to A9 A0 to A9 A0 to A11 A0 to A7 RAS OE I/O1-I/O16 UCAS LCAS WE VCC VSS N.C. Row Address Inputs for 1k-refresh version HYB3118160BSJ/BST Column Addess Inputs for 1k-refresh version HYB3118160BSJ/BST Row Address Inputs for 4k-refresh version HYB3116160BSJ/BST Column Address Inputs for 4k-refresh version HYB3116160BSJ/BST Row Address Strobe Output Enable Data Input/Output Upper Column Address Strobe Lower Column Address Strobe Read/Write Input Power Supply (+ 3.3 V) Ground (0 V) not connected Semiconductor Group 2 HYB3116(8)160BSJ/BST(L)-50/-60/-70 3.3V 1M x 16-DRAM P-SOJ-42 (400 mil) Vcc I/O1 I/O2 I/O3 I/O4 Vcc I/O5 I/O6 I/O7 I/O8 N.C.
