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Siemens Electronic Components Datasheet

BTS432E2 Datasheet

Smart Highside Power Switch

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PROFET® BTS 432 E2
Smart Highside Power Switch
Features
Product Summary
Load dump and reverse battery protection1)
Clamp of negative voltage at output
Short-circuit protection
Current limitation
Thermal shutdown
Diagnostic feedback
Open load detection in ON-state
CMOS compatible input
VLoad dump
80
Vbb-VOUT Avalanche Clamp
58
Vbb (operation)
4.5 ... 42
Vbb (reverse)
-32
RON
38
IL(SCp)
44
IL(SCr)
35
Electrostatic discharge (ESD) protection
IL(ISO)
11
Loss of ground and loss of Vbb protection2)
Overvoltage protection
Undervoltage and overvoltage shutdown with auto-restart and hysteresis
Application
µC compatible power switch with diagnostic feedback
for 12 V and 24 V DC grounded loads
All types of resistive, inductive and capacitve loads
Replaces electromechanical relays and discrete circuits
V
V
V
V
m
A
A
A
5
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, integrated in Smart SIPMOS® chip on chip technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
R bb
+ Vbb 3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) No external components required, reverse load current limited by connected load.
2) Additional external diode required for charged inductive loads
Semiconductor Group
1
04.96



Siemens Electronic Components Datasheet

BTS432E2 Datasheet

Smart Highside Power Switch

No Preview Available !

BTS 432 E2
Pin Symbol Function
1
GND
- Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5
OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 3)
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 , RL= 1.1 , td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC)
Inductive load switch-off energy dissipation,
single pulse
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
see internal circuit diagrams page 6...
Symbol
Vbb
Vs3)
IL
Tj
Tstg
Ptot
EAS
VESD
VIN
IIN
IST
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on pcb4):
Values Unit
63 V
66.5 V
self-limited
-40 ...+150
-55 ...+150
125
A
°C
W
1.7 J
2.0 kV
-0.5 ... +6
±5.0
±5.0
V
mA
1
75
tbd
K/W
3) VS is setup without DUT connected to the generator per ISO 7637-1 and DIN 40839
4) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
2


Part Number BTS432E2
Description Smart Highside Power Switch
Maker Siemens Semiconductor Group
Total Page 13 Pages
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