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Siemens Electronic Components Datasheet

BTS410H2 Datasheet

Smart Highside Power Switch

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PROFET® BTS 410 H2
Smart Highside Power Switch
Features
Overload protection
Current limitation
Short circuit protection
Thermal shutdown
Overvoltage protection (including load dump)
Fast demagnetization of inductive loads
Reverse battery protection1)
Undervoltage and overvoltage shutdown with
auto-restart and hysteresis
Open drain diagnostic output
Open load detection in OFF-state
CMOS compatible input
Loss of ground and loss of Vbb protection
Electrostatic discharge (ESD) protection
Product Summary
Overvoltage protection
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Vbb(AZ)
Vbb(on)
RON
IL(ISO)
IL(SCr)
65 V
4.7 ... 42 V
220 m
1.8 A
1.5 A
TO-220AB/5
5
Standard
5
1
Straight leads
1
SMD
5
Application
µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads
Most suitable for inductive loads
Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, monolithically integrated in Smart SIPMOS® technology. Fully protected by embedded protection
functions.
2 IN
Voltage
source
V Logic
Voltage
sensor
ESD
4 ST
Logic
Overvoltage Current
Gate
protection
limit protection
+ Vbb
3
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Open load
detection
OUT
Temperature
sensor
5
Load
Short circuit
detection
GND
1
Signal GND
PROFET®
Load GND
1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistors in series with IN and ST
connections, reverse load current limited by connected load.
Semiconductor Group
1
03.97



Siemens Electronic Components Datasheet

BTS410H2 Datasheet

Smart Highside Power Switch

No Preview Available !

BTS 410 H2
Pin Symbol Function
1
GND
- Logic ground
2 IN I Input, activates the power switch in case of logical high signal
3 Vbb + Positive power supply voltage,
the tab is shorted to this pin
4 ST S Diagnostic feedback, low on failure
5
OUT
O Output to the load
(Load, L)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Symbol
Supply voltage (overvoltage protection see page 3)
Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V
RI3)= 0.5 , RL= 6.6 , td= 400 ms, IN= low or high
Vbb
VLoad dump4)
Load current (Short circuit current, see page 4)
IL
Operating temperature range
Storage temperature range
Power dissipation (DC), TC 25 °C
Tj
Tstg
Ptot
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.
IL = 1.8 A, ZL = 2.3 H, 0 : EAS
Electrostatic discharge capability (ESD)
IN: VESD
(Human Body Model)
all other pins:
acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993
Input voltage (DC)
Current through input pin (DC)
Current through status pin (DC)
VIN
IIN
IST
see internal circuit diagrams page 6
Values Unit
65 V
100 V
self-limited
-40 ...+150
-55 ...+150
50
A
°C
W
4.5 J
1 kV
2
-0.5 ... +6
±5.0
±5.0
V
mA
Thermal Characteristics
Parameter and Conditions
Symbol
Thermal resistance
chip - case: RthJC
junction - ambient (free air): RthJA
SMD version, device on PCB5):
Values
Unit
min typ max
-- -- 2.5 K/W
-- -- 75
-- 35
--
2) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a
150 resistor in the GND connection and a 15 kresistor in series with the status pin. A resistor for the
protection of the input is integrated.
3) RI = internal resistance of the load dump test pulse generator
4) VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Semiconductor Group
2


Part Number BTS410H2
Description Smart Highside Power Switch
Maker Siemens Semiconductor Group
Total Page 13 Pages
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