Datasheet4U Logo Datasheet4U.com

BP103B - Silicon NPN Phototransistor

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 5s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 5s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤

Features

  • q Especially suitable for.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BP103 Silicon NPN Phototransistor OSRAM
BP1001-7R 120...195 Watt DC-DC Converters Power-One
BP101WX1-200 TFT LCD BOE
BP101WX1-206 TFT LCD BOE
BP101WX7-100-3940 TFT LCD BOE

Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
BP103BF Silicon NPN Phototransistor
BP103 NPN-Silizium-Fototransistor Silicon NPN Phototransistor
BP104F Silicon Phototransistor
BP104FS Silicon Phototransistor
BP104S Silicon Phototransistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
BP 103 B BP 103 BF . NPN-Silizium-Fototransistor NEU: NPN-Silizium-Fototransistor mit Tageslichtsperrfilter Silicon NPN Phototransistor NEW: Silicon NPN Phototransistor with Daylight Filter BP 103 B BP 103 BF Maβe in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.