• Part: BAT62-07
  • Description: Silicon Schottky Diode
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 33.60 KB
Download BAT62-07 Datasheet PDF
Siemens Semiconductor Group
BAT62-07
BAT 62-07W Silicon Schottky Diode - Low barrier diode for detectors up to GHz frequencies 3 4 2 1 VPS05605 ESD: Electrostatic discharge sensitive device, observe handling precaution Type BAT 62-07W Marking Ordering Code 62s Q62702-A1198 Pin Configuration 1=C1 2=C2 3=A2 4=A1 Package SOT-343 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 103 °C Junction temperature Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 40 20 100 150 -55 ...+150 Unit V m A m W °C VR IF Ptot Tj Tstg Rth JA Rth JS ≤ 630 ≤ 470 K/W Junction - soldering point Semiconductor Group Semiconductor Group Sep-07-1998 1998-11-01 BAT 62-07W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Reverse current typ. 0.58 max. 10 1 Unit IR VF - µA V VR = 40 V Forward voltage I F = 2 m A AC characteristics Diode capacitance CT CC R0 Ls - 0.35 0.1 225 2 - p...