BAW100
Silicon Switching Diode Array
For high-speed switching q Electrically insulated diodes q
BAW 100
Type BAW 100
Marking JSs
Ordering Code (tape and reel) Q62702-A376
Pin Configuration
Package1) SOT-143
Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 31 ˚C Junction temperature Storage temperature range Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
Symbol VR VRM IF IFS Ptot Tj Tstg
Values 75 85 200 4.5 330 150
- 65 … + 150
Unit V m A A m W ˚C
500 360
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
BAW 100
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 m A IF = 10 m A IF = 50 m A IF = 150 m A Reverse current VR = 75 V VR = 25...
