Q62702P1137 Datasheet PDF - Siemens Infra-red Emitter 5mm Specs

Q62702P1137 - Infra-red Emitter 5mm

Datasheet Summary

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlaßstrom Forward current Stoßstrom, tp = 10 µs, D = 0 Surge current Verlustleistung Power dissipation Wärmewiderstand Thermal resistance Symbol Symbol

Features

q GaAs infrared emitting diodes, fabricated in q q q q q im Schmelzepitaxieverfahren Gute Linearität (Ie = f [IF]) bei hohen Strömen Sehr hoher Wirkungsgrad Hohe Zuverlässigkeit Hohe Impulsbelastbarkeit SFH 415: Gehäusegleich mit SFH 300, SFH 203 a liquid phase epitaxy process Good linearity (Ie = f [IF]) at high currents High efficiency High reliability High pulse handling capability SFH 415: Same package as SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeräten, Vi.

Datasheet Details

Part number	Q62702P1137
Manufacturer	Siemens
File Size	77.73 KB
Description	Infra-red Emitter 5mm
Datasheet	Q62702P1137 Datasheet
Additional preview pages of the Q62702P1137 datasheet.

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Full PDF Text Transcription

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GaAs-IR-Lumineszenzdioden GaAs Infrared Emitters SFH 415 SFH 416 Cathode www.DataSheet4U.com 29 27 9.0 8.2 spacing 2.54 mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 ø4.8 ø5.1 Area not flat Chip position 4.8 4.2 0.6 0.4 GEO06645 Area not flat 0.6 0.4 6.9 6.1 5.7 5.5 2.54 mm spacing 0.8 0.4 5.9 5.5 1.8 1.2 29.5 27.5 Cathode (Diode) Collector (Transistor) ø5.1 ø4.8 4.0 3.4 Chip position 0.6 0.4 fex06630 GEX06630 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Published: Aug 13, 2008 |