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HYM72V8000GS-60 - 8M x 72-Bit Dynamic RAM Module

General Description

Pin Names A0-A12,B0 A0-A11,B0 DQ0 - DQ71 RAS0, RAS2 CAS0 , CAS2 WE0, WE2 OE0, OE2 Vcc Vss PD1 - PD8 PDE ID0 , ID1 N.C.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYM72V8000GS-50 8M x 72-Bit Dynamic RAM Module
HYM72V8000GS-50- 8M x 72-Bit Dynamic RAM Module
HYM72V8005GU-50 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
HYM72V8005GU-60 3.3V 8M x 64-Bit EDO-DRAM Module 3.3V 8M x 72-Bit EDO-DRAM Module
HYM72V8010GS-50 8M x 72-Bit Dynamic RAM Module

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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8M × 72-Bit Dynamic RAM Module (ECC - Module) HYM 72V8000GS-50/-60 HYM 72V8010GS-50/-60 Preliminary Information • • 8 388 608 words by 72-bit ECC - mode, one bank organization Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time 110 ns cycle time (-60 version) Fast page mode capability with 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) Single + 3.3V ± 0.3 V supply Low power dissipation max. 4536 mW active (-50 version) max.