Datasheet Details
| Part number | HYM322035GS-60 |
|---|---|
| Manufacturer | Siemens Semiconductor Group (now Infineon) |
| File Size | 79.76 KB |
| Description | 2M x 32-Bit Dynamic RAM Module |
| Datasheet |
 HYM322035GS-60 Datasheet
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General Description
EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns) EDO-DRAM Module (access time 50 ns) EDO-DRAM Module (access time 60 ns) EDO-DRAM Module (access time 70 ns)
Semiconductor Group
2
HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module
Pin Confi
Key Features
- ddress can be changed once or less while RAS = Vil. In case of ICC4 it can be changed once or less during a hyper page mode (EDO) cycle. 5) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device o.