| Description | Si2301 P-Channel Enhancement Mode Field Effect Transistor FEATURES Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package PRODUCT SUMMARY VDSS ID RDS(ON) (m ) Typ -20V -3.6A 95@ VGS=-4.5V 115 @ VGS=-2.5V NOTE The Si2301 is available in a lead-free package D S G ABSOLUTE MAXIUM RATINGS TA=25 Parameter Drain-Source Voltage Gate-Source Volt... |
| Features |
Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement SOT-23 package
PRODUCT SUMMARY
VDSS
ID RDS(ON) (m ) Typ
-20V
-3.6A
95@ VGS=-4.5V 115 @ VGS=-2.5V
NOTE The Si2301 is available in a lead-free package
D
S G
ABSOLUTE MAXIUM RATINGS TA=25
Parameter
Drain-Source Voltage
Gate-Source Voltage Drain Current-C...
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| Datasheet |
 Si2301 Datasheet - 187.60KB |
