• Part: PA2423L
  • Manufacturer: SiGe Semiconductor Inc.
  • Size: 367.62 KB
Download PA2423L Datasheet PDF
PA2423L datasheet preview
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PA2423L Key Features

  • and its exposed-die-pad package, soldered to the system PCB
  • provide high thermal conductivity and a subsequently low junction temperature. This device is capable of operating at a
  • 6 lead LPCC (1.6mm x 3.0mm)
  • LPCC Shipping Method Tape and reel Tubes -samples PA2423L-EV Evaluation kit

Other PA2423L Datasheets

Manufacturer Part Number Description
SiGe Semiconductor Logo SiGe Semiconductor PA2423U 2.4 GHz Bluetoothtm Power Amplifier

PA2423L Description

A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423L is designed for class 1 Bluetoothtm 2.4 GHz radio applications. It delivers +22.5 dBm output power with 45% power-added efficiency making it capable of overing insertion losses of up to 2.5 dB between amplifier output and antenna input in tm class 1 Bluetooth applications.