D100JHT160V - Bridge Diodes

Shindengen

Datasheet Details

Part number	D100JHT160V
Manufacturer	Shindengen
File Size	1.39 MB
Description	Bridge Diodes
Datasheet	D100JHT160V Datasheet
Additional preview pages of the D100JHT160V datasheet.

📁 Similar Datasheet

D1000 - 2SD1000 (Renesas)
D1001 - 2SD1001 (Renesas)
D1001UK - METAL GATE RF SILICON FET (Seme LAB)
D1002UK - METAL GATE RF SILICON FET (Seme LAB)
D1003UK - METAL GATE RF SILICON FET (Seme LAB)
D1004 - METAL GATE RF SILICON FET (Seme LAB)
D10040180GT - GaAs Power Doubler (PDI)
D10040180GTH - GaAs Power Doubler (PDI)
D10040200GT - Product Specification (PDI)
D10040200GTH - GaAs Power Doubler (PDI)

Other Datasheets by Shindengen

D100JHT120V - Bridge Diodes
D100JHT80V - Bridge Diodes
D10FDC10ST - Schottky Barrier Diode
D10FR60LA - Fast Recovery Diodes
D10FR60V - General Rectifying Diodes
D10FY10ST - Schottky Barrier Diodes
D10FY10SY - Schottky Barrier Diodes
D10FY15ST - Schottky Barrier Diodes

Full PDF Text Transcription

Click to expand full text

D100JHT160V Bridge Diodes 1600V, 100A Feature DIP High Current UL E142422 Pb free terminal RoHS:Yes OUTLINE Package (House Name): JH Equivalent circuit Absolute Maximum Ratings (unless otherwise specified : Tc=25℃) Item Storage temperrature Junction temperature Repetitive peak reverse voltage Average forward current Average forward current Surge forward current Surge forward current Current squared time Dielectric strength Mounting torque Symbol Conditions Tstg Tj VRRM IF(AV) 50Hz sine wave, Resistance load, With heatsink, Tc=92℃ IF(AV) 50Hz sine wave, Resistance load, On glass-epoxy substrate, Ta=25℃ ※ 50Hz sine wave, Non-repetitive 1 cycle peak value, IFSM per diode, Tj=25℃ IFSM1 I²t tp=1ms, sine wave, Non-repetitive, peak value, per diode, Tj=25℃ 1ms≦t＜10ms, per diode

Published: May 5, 2024 |