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Sharp Electronic Components Datasheet

PT501 Datasheet

TO-18 Type Narrow Acceptance Phototransistor

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PT501/PT510
PT501/PT510
TO-18 Type Narrow
Acceptance Phototransistor
s Features
1. Narrow acceptance (∆θ : TYP. ± 6˚ )
2. TO -18 type standard package
3. With base terminal : PT510
s Outline Dimensions
φ 4.7±0.1 Glass
lens
PT501
( Unit : mm )
φ 4.7± 0.1 Glass
lens
PT510
s Applications
1. Optoelectronic switches, optoelectronic
counters
2. Smoke detectors
3. Infrared applied systems
φ 0.45
2.5
1.0
45˚
21
φ 5.7MAX.
1
φ 0.45
2.5
3 2 φ 2.5
1.0 1
45˚ φ 5.7MAX.
1
s Absolute Maximum Ratings
1 Collector
2 Emitter
2
( Ta = 25˚C)
1 Collector(Case)
2 2 Base
3 3 Emitter
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector-base voltage
Emitter-base voltage
Collector power dissipation
Operating temperature
Storage temperature
*1 Soldering temperature
Symbol
V CEO
V ECO
V CBO
V EBO
PC
T opr
T stg
T sol
PT501
45
6
-
-
75
- 25 to + 125
- 55 to + 150
260
PT510
35
6
35
6
75
- 25 to + 125
- 55 to + 150
260
Unit
V
V
V
V
mW
˚C
˚C
˚C
*1 For 10 seconds at the position of 1.3mm from the bottom face of can package
s Electro-optical Characteristics
( Ta = 25˚C)
Parameter
*2Collector current
Collector dark current
*2Collector-emitter saturation voltage
Peak sensitivity wavelength
Response
time
Rise time
Fall time
Symbol
Conditions
IC VCE = 5V, E e= 10mW/cm2
I CEO
VCE (sat)
λP
VCE = 30V, Ee = 0
IC = 1mA, E e = 10mW/cm2
tr
VCE = 2V, I C = 2mA,
RL = 100( PT501 : 1k )
tf
MIN.
2.5
-
-
-
-
-
TYP.
PT501 10
PT510 20
2 x 10 - 9
0.2
800
PT501 10
PT510
2
PT501 10
PT510
3
MAX.
-
10- 7
-
-
-
Unit
mA
A
V
nm
µs
- µs
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT501 Datasheet

TO-18 Type Narrow Acceptance Phototransistor

No Preview Available !

*2 Classification Table of Collector Current( IC)
Model No.
PT501A
PT501B
PT501C
at VCE= 5V, E e = 10mW/cm 2 , Ta = 25˚C
IC (mA)
20 to 80
10 to 25
2.5 to 15
PT501/PT510
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
100
80
75
60
40
20
0
- 25 0
25 50 75 100 125
Ambient temperature T a (˚C)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
160
140
VCE = 5V
Ee = 10mW/cm2
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70
Ambient temperature T a (˚C)
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10 -4
VCE = 30V
10 -5
10 -6
10 -7
10 -8
10 -9
10 -10
10 -11
- 25 0 25 50 75 100 125
Ambient temperature T a (˚C)
Fig.4-a Collector Current vs. Irradiance
20
VCE = 5V
T a = 25˚C
(PT501 )
15
10
5
0
0 2 4 6 8 10
Irradiance E e ( mW/cm2)


Part Number PT501
Description TO-18 Type Narrow Acceptance Phototransistor
Maker Sharp Electrionic Components
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PT501 Datasheet PDF






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