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PT495F Datasheet

Intermediate Acceptance High Sensitivity Phototransistor

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PT495F
s Features
1. Epoxy resin package type
2. Compact
3. Intermediate acceptance (∆θ : TYP.± 40˚ )
4. Long lead pin type MAX. lead length of 51.5 mm
( )acceptable to order
5 . Visible light cut-off type
s Applications
1. VCRs
2. Optoelectronic switches
PT495F
Intermediate Acceptance
High Sensitivity Phototransistor
s Outline Dimensions
2-C0.5
3.0 R1.25±0.1
(Unit : mm)
2.8
1.55
1.15
0.75
2-0.8
(2-0.6 )
(1.7 )
Visible light cut-off
resin (black)
+ 0.15
2-0.45 - 0.05
+ 0.15
2-0.4 - 0.05
(2.54)
1
2.8
2 2 Collector
1 Emitter
2
1
(Note) MAX. lead length of 51.5 mm acceptable to order
s Absolute Maximum Ratings
(Ta=25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1 Soldering temperature
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
50
75
- 25 to +85
- 40 to +85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 1 For 3 seconds at the position of 1.4 mm from the resin edge
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT495F Datasheet

Intermediate Acceptance High Sensitivity Phototransistor

No Preview Available !

s Electro-optical Characteristics
Parameter
*2Collector current
Dark current
*2Collector-emitter saturation voltage
Peak sensitivity wavelength
Response time
Half intensity angle
Rise
Fall
Symbol
Conditions
IC V CE = 2V, EV = 2 lx
I CEO
V CE(sat)
λp
VCE = 10V, E e = 0
IC = 0.8mA,
Ee = 1mW/cm2
-
tr V CE = 2V, I C = 5mA
tf RL = 100
∆θ -
*2 Ev, E e : Illuminance, irradiance by CIE standard light source A (tungsten lamp)
PT495F
MIN.
0.2
-
-
-
-
-
-
TYP.
-
-
-
860
80
70
± 40
(Ta=25˚C)
MAX.
0.8
10 -6
Unit
mA
A
1.0 V
- nm
400 µ s
350
Fig. 1 Collector Power Dissipation vs.
Ambient temperature
80
70
60
50
40
30
20
10
0
- 25 0
25 50 75 85 100
Ambient temperature Ta (˚C)
Fig. 3 Relative Collector Current vs.
Ambient temperature
175
VCE = 2V
EV = 2 1x
150
125
100
75
50
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Fig. 2 Dark Current vs. Ambient temperature
10 - 4
5
10 - 5
5
VCE
= 10V
10 - 6
5
10 - 7
5
10 - 8
5
10 - 9
5
10 - 10
5
10 - 11
5
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Fig. 4 Collector Current vs. Irradiance
50
VCE = 2V
Ta = 25˚C
20
10
5
2
1
2
5
10 - 1
2
51
Irradiance Ee ( mW/cm2)


Part Number PT495F
Description Intermediate Acceptance High Sensitivity Phototransistor
Maker Sharp Electrionic Components
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PT495F Datasheet PDF






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