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Sharp Electronic Components Datasheet

PT4810 Datasheet

Thin Type Phototransistor

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PT4800/PT4800F/PT4810/PT4810F/PT4850F
PT4800/PT4800F/PT4810
PT4810F/PT4850F
Thin Type Phototransistor
s Features
1. Thin type package ( Thickness : 1.5mm )
2. Visible light cut-off type :
PT4800F/PT4810F/PT4850F
3. Single phototransistor output :
PT4800/PT4800F/PT4850F
Darlington phototransistor output:
PT4810/PT4810F
4. Thin type
s Applications
1. VCRs
2. Floppy disk drives
s Outline Dimensions
( Unit : mm)
2 - C0.5
3.0
1.6
φ 0.8
2 - 0.45
2 - 0.9
PT4810F
Mark(blue)
PT4850F
Mark(black)
1.5
0.8 PT4800/F
PT4850F
g Epoxy resin 2
0.7
1
PT4810/F
2
2.54 2 - 0.25
1
PT4800
PT4810
F type
2
1 Emitter
2 Collector
g Epoxy resin
Transparent resin
Transparent blue resin
Visible light cut-off resin (black )
1
s Absolute Maximum Ratings
( Ta = 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
PT4800/PT4800F/PT4850F
PT4810/PT4810F
Collector power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
20
50
75
- 25 to + 85
- 40 to + 85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For 3 seconds at the position of 1.8mm from the bottom face of resin package
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT4810 Datasheet

Thin Type Phototransistor

No Preview Available !

PT4800/PT4800F/PT4810/PT4810F/PT4850F
s Electro-optical Characteristics
( Ta = 25˚C)
Parameter
PT4800
PT4800F
*2Collector current
PT4850F
PT4810
PT4810F
PT4800/PT4800F
Collector dark current
PT4850F
PT4810/PT4810F
PT4800/PT4800F
*2Collector-emitter saturation
voltage
PT4850F
PT4810/PT4810F
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity
wavelength
Response
time
Rise time
Fall time
PT4800
PT4800F
PT4850F
PT4810
PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
PT4800/PT4800F
PT4850F
PT4810/PT4810F
Half intensity angle
Symbol
Conditions
Ee = 1mW/cm2
VCE = 5V
IC
Ee = 0.1mW/cm2
VCE = 2V
I CEO
V CE
( sat )
BV CEO
BV ECO
Ee = 0, VCE = 20V
Ee = 0, VCE = 10V
Ee = 10mW/cm2
IC = 0.5mA
Ee = 1mW/cm2
IC = 2.5mA
IC = 0.1mA
Ee = 0
IE = 0.01mA
Ee = 0
λp -
VCE = 2V, I C = 2mA
RL = 100
t r VCE = 2V
IC = 10mA
RL = 100
VCE = 2V, I C = 2mA
RL = 100
tf V CE = 2V
IC = 10mA
RL = 100
∆θ -
MIN.
0.12
0.08
0.12
0.45
0.27
-
-
-
TYP.
0.4
0.25
-
-
-
-
-
-
MAX.
1.0
0.75
0.56
7.0
6.0
0.1
1.0
0.4
Unit
mA
mA
mA
mA
mA
mA
mA
V
- - 1.0 V
35 -
-V
6 - -V
- 800 - nm
- 860 - nm
- 860 - nm
- 800 - nm
- 860 - nm
- 3.0 - µ s
- 80 400 µ s
- 3.5 - µ s
- 70 350 µ s
- ± 35 -
˚
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp)
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
Fig. 2-a Collector Dark Current vs.
Ambient Temperature
(PT4800/PT4800F/PT4850F )
10 - 6
5 VCE = 20V
100 2
10 - 7
80 5
2
60 10 - 8
5
40 2
10 - 9
20 5
0
- 25 0
25 50 75 85 100
Ambient temperature T a (˚C)
2
10 - 10
0
25 50 75
Ambient temperature T a (˚C)
100


Part Number PT4810
Description Thin Type Phototransistor
Maker Sharp Electrionic Components
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PT4810 Datasheet PDF






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