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Sharp Electronic Components Datasheet

PT481 Datasheet

Narrow Acceptance High Sensitivity Phototransistor

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PT481/PT481F/PT483F1
PT481/PT481F/
PT483F1
s Features
1. Epoxy resin package
2. Narrow acceptance (∆ θ : Typ. ± 13˚ )
3. High sensitivity
( IC : MIN. 1.5mA at E e = 0.1mW/cm 2) :
PT481/PT483F1
( IC : MIN. 0.9mA at E e = 0.1mW/cm 2) :
PT481F
4. Visible light cut-off type : PT481F/PT483F1
5. Long lead pin type : PT483F1
s Applications
1. VCRs, cassette tape recorders
2. Floppy disk drives
3. Optoelectronic switches
4. Automatic stroboscopes
s Absolute Maximum Ratings ( Ta = 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
50
75
- 25 to +85
- 40 to +85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For 3 seconds at the position of 1.4mm from the
bottom face of resin package
Narrow Acceptance High
Sensitivity Phototransistor
s Outline Dimensions
PT481/PT481F
2 - C0.5 3.0
Detector center
1.15
0.75
( Unit : mm)
Epoxy
resin g
R0.5
R0.8± 0.1
Mark
(black)
PT481F
1.7
0.15
60˚
2.54
1.6
2.8
12
2 - 0.4
2 - 0.45
2 - 0.8
1 Emitter
2 Collector
2
PT481
PT481F
g Epoxy resin
Light blue transparent resin
Visible light cut-off resin ( black )
PT483F1
Detector center
2 - C0.5 3.0
1.15
0.75
R0.5
R0.8±0.1
Mark
(black)
2 - 0.6
1.7
0.15
60˚
1
Epoxy
resin g
2.54
1.6
2.8
12
2 - 0.4
2 - 0.45
2 - 0.8
1 Emitter
2 Collector
2
g Visible light cut-off resin ( black )
1
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT481 Datasheet

Narrow Acceptance High Sensitivity Phototransistor

No Preview Available !

s Electro-optical Characteristics
Parameter
*2 Collector
current
PT481
PT481F
PT483F1
Collector dark current
*2 Collector-emitter saturation voltage
Peak emission
wavelength
Response time
PT481
PT481F/PT483F1
Rise time
Fall time
Symbol
Conditions
IC
V CE = 2V
Ee = 0.1mW/cm2
I CEO
V CE(sat)
VCE = 10V, E e = 0
Ic = 2.5mA
Ee = 1mW/cm2
λp -
t r VCE = 2V, I C = 10mA
tf RL = 100
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp )
PT481/PT481F/PT483F1
MIN.
1.5
0.9
1.5
-
-
-
-
-
-
TYP.
10
-
-
-
0.7
800
860
80
70
( Ta = 25˚C)
MAX.
25
27
4.0
10- 6
Unit
mA
mA
mA
A
1.0 V
- nm
- nm
- µs
- µs
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
60
50
40
30
20
10
0
- 25 0
25 50 75 85 100
Ambient temperature Ta (˚C)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
175
VCE = 2V
Ee = 0.1mW/cm2
150
125
100
75
50
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10 - 4
5 VCE
10 - 5 = 10V
5
10 - 6
5
10 - 7
5
10 - 8
5
10 - 9
5
10 - 10
5
10 - 11
5
- 25
0 25 50 75
Ambient temperature Ta (˚C)
100
Fig.4-a Collector Current vs. Irradiance
(PT481 )
50
VCE = 2V
T a = 25˚C
20
10
5
2
1
2
5
10- 1
2
51
Irradiance Ee ( mW/cm2)


Part Number PT481
Description Narrow Acceptance High Sensitivity Phototransistor
Maker Sharp Electrionic Components
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