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Sharp Electronic Components Datasheet

PT480 Datasheet

Narrow Acceptance Phototransistor

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PT480/PT480F
PT480/PT480F
Narrow Acceptance
Phototransistor
s Features
1. Epoxy resin package
2. Narrow acceptance (∆ θ : TYP. ± 13˚ )
3. Visible light cut-off type : PT480F
s Outline Dimensions
Detector center
2 - C0.5 3.0
1.15
0.75
( Unit : mm)
g Epoxy resin
R0.5
s Applications
1. VCRs, cassette tape recorders
2. Floppy disk drives
3. Optoelectronic switches
4. Automatic stroboscopes
R0.8± 0.1
1.7
0.15
60˚
2.54
1.6
2 - 0.4
2 - 0.45
2 - 0.8
2
1
PT480
PT480F
2.8
2
1 Emitter
2 Collector
g Epoxy resin
Transparent resin
Visible light cut-off
resin (black )
1
s Absolute Maximum Ratings
( Ta = 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
Symbol
V CEO
V ECO
IC
PC
T opr
T stg
T sol
Rating
35
6
20
75
- 25 to + 85
- 40 to + 85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For 5 seconds at the position of 1.4mm from the bottom face of resin package
s Electro-optical Characteristics
Parameter
*2Collector
PT480
current
PT480F
Collector dark crrrent
*2Collector-emitter saturation
voltage
Peak sensitivity
PT480
wavelength
PT480F
Response time
Rise time
Fall time
Symbol
Conditions
IC
VCE = 5V
Ee = 1mW/cm2
ICEO VCE = 20V, Ee= 0
V CE(sat) IC = 0.5mA, E e = 10mW/cm2
λP -
t r VCE = 2V, I C = 2mA
tf RL = 100
*2 E e : Irradiance by CIE standard light source A ( tungsten lamp )
MIN.
0.4
0.25
-
-
-
-
-
-
TYP.
1.7
0.8
10- 9
0.1
800
860
3
3.5
( Ta = 25˚C)
MAX.
6.0
3.0
10- 7
Unit
mA
mA
A
0.4 V
- nm
- nm
- µs
- µs
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT480 Datasheet

Narrow Acceptance Phototransistor

No Preview Available !

Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
60
50
40
30
20
10
0
- 25 0
25 50 75 85 100
Ambient temperature T a ( ˚C)
Fig. 3 Relative Collector Current vs.
Ambient Temperature
160
140
VCE = 5V
Ee = 1mW/cm2
120
100
80
60
40
20
0
0 10 20 30 40 50 60 70
Ambient temperature T a ( ˚C)
Fig.4-b Collector Current vs. Irradiance
(PT480F )
10
VCE = 5V
5 Ta = 25˚C
2
1
0.5
0.2
0.1
0.05
0.1 0.2
0.5 1 2
5
Irradiance E e ( mW/cm 2)
10 20
PT480/PT480F
Fig. 2 Collector Dark Current vs.
Ambient Temperature
10 - 6
5 VCE = 20V
2
10 - 7
5
2
10 - 8
5
2
10 - 9
5
2
10 - 10
0
25 50 75
Ambient temperature T a ( ˚C)
100
Fig.4-a Collector Current vs. Irradiance
( PT480)
20
VCE = 5V
10 Ta = 25˚C
5
2
1
0.5
0.2
0.1
0.1 0.2
0.5 1
2
5 10 20
Irradiance E e ( mW/cm2)
Fig.5-a Collector Current vs.
Collector-emitter Voltage
( PT480)
2.0
1.8
Ta =
25˚C
Ee =
1.0mW/cm2
1.6
1.4 0.75mW/cm2
1.2
1.0 0.5mW/cm2
0.8
0.6
0.4 0.25mW/cm2
0.2
0.1mW/cm2
0
0 5 10 15 20 25 30 35 40
Collector-emitter voltage V CE ( V)


Part Number PT480
Description Narrow Acceptance Phototransistor
Maker Sharp Electrionic Components
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PT480 Datasheet PDF






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