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Sharp Electronic Components Datasheet

PT4110 Datasheet

Side View and Thin Flat Type Phototransistors

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PT4110/PT4110F
s Features
1. Compact and thin flat package
2. Wide beam angle
(Half intensity angle : ± 70˚ )
3. Visible light cut-off type available ( PT4110F )
s Applications
1. Optoelectronic switches
2. Encoders
PT4110/PT4110F
Side View and Thin Flat Type
Phototransistors
s Outline Dimensions
(Unit : mm)
2 - C0.5
3.0
Detector
center
Rugged resin
MAX. 0.2
2
-
0.45
+
-
0.3
0.1
(1.7)
1.8
0.7
0.7
g Epoxy resin
4˚ 4˚
MAX. 0.1
4˚ 4˚
0.15
1
2
-
0.4
+ 0.3
- 0.1
2
12
(2.54)
6˚ 6˚
6˚ 6˚
2.8
1 Emitter
2 Collector
Model
g Resin type
PT4110 Pale blue transparent epoxy resin
PT4110F Black visible light cut-off epoxy resin
* Tolerance : ±0.2 mm
* ( ) : Reference dimensions
s Absolute Maximum Ratings
(Ta= 25˚C)
Parameter
Collector-emitter voltage
Emitter-collector voltage
Collector current
Collector power dissipation
Operating temperature
Storage temperature
*1Soldering temperature
Symbol
V CEO
V ECO
IC
PC
Topr
Tstg
Tsol
Rating
35
6
50
75
- 25 to +85
- 40 to +85
260
Unit
V
V
mA
mW
˚C
˚C
˚C
*1 For MAX. 5 seconds at the position of 1.4 mm from the resin edge
Soldering area
In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs,
data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device.


Sharp Electronic Components Datasheet

PT4110 Datasheet

Side View and Thin Flat Type Phototransistors

No Preview Available !

s Electro-optical Characteristics
Parameter
Collector current
PT4110
PT4110F
Dark current
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Peak sensitivity wavelength
Response time
Half intensity angle
PT4110
PT4110F
Rise Time
Fall Time
*2 Ee : Irradiance by CIE standard light source A (tungsten)
Symbol
IC
I CEO
V CE(sat)
BVCEO
BVECO
λp
tr
tf
∆θ
Conditions
*2 Ee = 1mW/cm2
VCE = 5V
Ee = 0, VCE = 10V
*2 Ee = 1mW/cm2
IC = 2.5mA
IC = 0.1mA
*2 Ee = 0
IE = 0.01mA
*2 Ee = 0
-
VCE = 2V, IC = 10mA
RL = 100
-
PT4110/PT4110F
(Ta = 25˚C)
MIN. TYP. MAX. Unit
4.0 - 25 mA
2.5 - 19 mA
- - 1.0 µ A
- - 1.2 V
35 -
-
6- -
- 800 -
- 860 -
- 60 -
- 53 -
- ± 70 -
V
V
nm
µs
µs
˚
Fig. 1 Collector Power Dissipation vs.
Ambient Temperature
80
70
60
50
40
30
20
10
0
- 25
0 25 50 75 85 100
Ambient temperature Ta (˚C)
Fig. 2 Dark Current vs. Ambient Temperature
10 - 4
5 VCE
10-5 = 10V
5
10 - 6
5
10 - 7
5
10 - 8
5
10 - 9
5
10 - 10
5
10 - 11
5
- 25
0
25 50 75
Ambient temperature Ta (˚C )
100


Part Number PT4110
Description Side View and Thin Flat Type Phototransistors
Maker Sharp Electrionic Components
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PT4110 Datasheet PDF






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