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LH52D1000 - CMOS 1M (128K x 8) Static Ram

Description

The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode.

It is fabricated using silicon-gate CMOS process technology.

Features

  • Access time: 85 ns (MAX. ), 100 ns (MAX. ).
  • Current consumption: Operating: 40 mA (MAX. ) 6 mA (MAX. ) (tRC, tWC = 1 µs) Standby: 45 µA (MAX. ).
  • Data Retention: 1.0 µA (MAX. VCCDR = 3 V, tA = 25 °C).
  • Single power supply: 2.7 V to 3.6 V.
  • Operating temperature: -40°C to +85°C.
  • Fully-static operation.
  • Three-state output.
  • Not designed or rated as radiation hardened.
  • Packages: 32-pin 8 × 20 mm2 TSOP 32-pin 8 × 13.4 mm2 STSOP.

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Datasheet Details

Part number LH52D1000
Manufacturer Sharp Corporation
File Size 81.06 KB
Description CMOS 1M (128K x 8) Static Ram
Datasheet download datasheet LH52D1000 Datasheet
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LH52D1000 FEATURES • Access time: 85 ns (MAX.), 100 ns (MAX.) • Current consumption: Operating: 40 mA (MAX.) 6 mA (MAX.) (tRC, tWC = 1 µs) Standby: 45 µA (MAX.) • Data Retention: 1.0 µA (MAX. VCCDR = 3 V, tA = 25 °C) • Single power supply: 2.7 V to 3.6 V • Operating temperature: -40°C to +85°C • Fully-static operation • Three-state output • Not designed or rated as radiation hardened • Packages: 32-pin 8 × 20 mm2 TSOP 32-pin 8 × 13.4 mm2 STSOP • N-type bulk silicon DESCRIPTION The LH52D1000 is a static RAM organized as 131,072 × 8 bits which provides low-power standby mode. It is fabricated using silicon-gate CMOS process technology.
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