LH28F400SU-LC
LH28F400SU-LC is 4M (512K bb 8/ 256K bb 16) Flash Memory manufactured by Sharp Corporation.
FEATURES
- User-Configurable x8 or x16 Operation
4M (512K × 8, 256K × 16) Flash Memory
56-PIN TSOP TOP VIEW
- 5 V Write/Erase Operation
(5 V VPP, 3.3 V VCC)
- No Requirement for DC/DC Converter to Write/Erase
NC NC A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE RP NC NC VPP RY/BY NC A17 A7 A6 A5 A4 A3 A2 A1 NC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28
56 55 54 53 52 51 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29
NC A16 BYTE GND DQ15/A-1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 QE GND CE A0 NC NC
- 150 ns Maximum Access Time
(VCC = 3.3 V ± 0.3 V)
- Minimum 2.7 V Read Capability
- 190 ns Maximum Access Time (VCC = 2.7 V)
- 32 Independently Lockable Blocks (16K)
- 100,000 Erase Cycles per Block
- Automated Byte Write/Block Erase
- mand User Interface
- Status Register
- RY / » BY » Status Output
- System Performance Enhancement
- Erase Suspend for Read
- Two-Byte Write
- Full Chip Erase
- Data Protection
- Hardware Erase/Write
Lockout during Power Transitions
- Software Erase/Write Lockout
- Independently Lockable for Write/Erase on Each Block (Lock Block and Protect Set/Reset)
- 4 µA (Typ.) ICC in CMOS Standby
- 0.2 µA (Typ.) Deep Power-Down
- Extended Temperature Operation
- -40°C to +85°C
28F400SUH-LC15-1
Figure 1. 56-Pin TSOP Configuration
- State-of-the-Art 0.55 µm ETOX™ Flash
Technology
- 56-Pin, 1.2 mm × 14 mm × 20 mm TSOP
(Type I)...
